发明名称 |
METHOD FOR PREPARING SEMICONDUCTOR SUBSTRATE WITH INSULATING BURIED LAYER BY GETTERING PROCESS |
摘要 |
A method for preparing a semiconductor substrate with an buried insulating layer by a guttering process, includes the following steps: providing a device substrate and a supporting substrate; forming an insulating layer on a surface of the device substrate; performing a heating treatment on the device substrate, so as to form a denuded zone on the surface of the device substrate; bonding the device substrate having the insulating layer with the supporting substrate, such that the insulating layer is sandwiched between the device substrate and the supporting substrate; annealing and reinforcing a bonding interface, such that an adherence level of the bonding interface meets requirements in the following chamfering grinding, thinning and polishing processes; performing the chamfering grinding, thinning and polishing processes on the device substrate which is bonded. |
申请公布号 |
KR20130115339(A) |
申请公布日期 |
2013.10.21 |
申请号 |
KR20137019860 |
申请日期 |
2010.12.31 |
申请人 |
SHANGHAI SIMGUI TECHNOLOGY CO., LTD.;SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATIONTECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
发明人 |
WEI XING;WANG ZHONGDANG;YE FEI;CAO GONGBAI;LIN CHENGLU;ZHANG MIAO;WANG XI |
分类号 |
H01L21/322;H01L21/20;H01L21/84 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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