发明名称 VARIABLE IMPEDANCE CONTROL FOR MEMORY DEVICES
摘要 This document generally describes systems, devices, methods, and techniques for variably controlling impedance for a memory device where multiple NVM units (e.g., NVM dies) are accessible over a shared bus. Impedance can be varied using switches that are configured to switch between a NVM unit and an impedance terminal. Switches can be adjusted during operation of a memory device so that a memory controller is connected over a shared bus to a selected single NVM unit and one or more impedance terminals. Impedance terminals can be configured to provide a relatively small load (a smaller load than an NVM unit) that is impedance matched (alone or in combination with other impedance terminals and/or a NVM unit) with a source impedance on a shared bus that is provided by a memory controller.
申请公布号 KR101320731(B1) 申请公布日期 2013.10.21
申请号 KR20120018128 申请日期 2012.02.22
申请人 发明人
分类号 G11C7/10;G11C16/06 主分类号 G11C7/10
代理机构 代理人
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