发明名称 |
SYSTEM AND METHOD OF ION BEAM SOURCE FOR SEMICONDUCTOR ION IMPLANTATION |
摘要 |
PURPOSE: A line scanning device for the density distribution equalizing of an acceleration ion beam and a method thereof are provided to increase currents of an ion beam by including an electric field discharge array. CONSTITUTION: An ionization chamber (101) provides ion during an ion injection process. An electronic beam source device (110) is included in the ionization chamber. The electronic beam source device includes an electric field discharge array. The array includes a plurality of emitters. The emitters generate electrons in vacuum. |
申请公布号 |
KR20130115064(A) |
申请公布日期 |
2013.10.21 |
申请号 |
KR20120072262 |
申请日期 |
2012.07.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HWANG CHIH HONG;CHANG CHUN LIN;YANG CHI MING;LIN CHIN HSIANG;KU WEN YU |
分类号 |
H01J37/317;H01J37/08 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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