发明名称 PLASMA GENERATING APPARATUS AND METHOD OF PLASMA PROCESSING OF SUBSTRATE
摘要 PURPOSE: A plasma generating apparatus and a plasma treatment method of a substrate are provided to stably generate high-density plasma even around atmospheric pressure by suppressing a phenomenon where plasma is transferred to arc. CONSTITUTION: A plasma generating apparatus (100) comprises a first electrode (120) and a second electrode (140). The first electrode settles a substrate (130). The second electrode comprises: multiple capillaries (143) including a body (142) which is formed on a surface opposing to the first electrode and limits a cavity (141); a porous conductive layer on the bottom (141a) of the cavity; and a discharge gas passageway (170). The porous conductive layer includes multiple fine pores which are connected to one another in order to allow the inflow of gas into the inside of the cavity.
申请公布号 KR20130114787(A) 申请公布日期 2013.10.21
申请号 KR20120037089 申请日期 2012.04.10
申请人 KOREA INSTITUTE OF MACHINERY & MATERIALS 发明人 NAM, KEE SEOK;KANG, JAE WOOK;KWON, JUNG DAE;KIM, DONG HO;KIM, CHANG SU;RYU, SEOUNG YOON;PARK, SUNG GYU;YOON, JUNG HEUM;LEE, GUN HWAN;LEE, SUNG HUN;JEONG, YONG SOO
分类号 H05H1/34;C23C16/50;H01L21/205 主分类号 H05H1/34
代理机构 代理人
主权项
地址