| 摘要 |
PURPOSE: A memory device including a sense amplifier and a driving method thereof improve the operation stability of the memory device by reducing leakage current of remaining unselected cells. CONSTITUTION: Multiple storage cells are combined with a pair of a read bit line and a write bit line. A latch circuit (200) performs an amplification operation according to an amplification path formed by sensing data transmitted from the pair of the read bit line and the write bit line when a drive enable signal is activated. A main precharge circuit (300) is combined with the pair of the read bit line and the write bit line and performs a precharge operation of the read bit line or the write bit line. A switching circuit (400) selectively combines the read bit line and the latch circuit by a switching operation and blocks the latch circuit from the read bit line when a block enable signal is activated after the drive enable signal is activated. [Reference numerals] (AA) Node A |
