发明名称 SEMICONDUCTOR DEVICE CHANNEL SYSTEM AND METHOD
摘要 PURPOSE: A semiconductor device channel system and a method thereof are provided to increase a band gap by including a channel region with a plurality of dual layers. CONSTITUTION: A channel region is formed on a substrate (101). A trench (105) is formed in an isolation region (103). The substrate is formed under the isolation region. The substrate is made of semiconductor materials with crystal orientations.
申请公布号 KR20130115112(A) 申请公布日期 2013.10.21
申请号 KR20130002985 申请日期 2013.01.10
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 DOORNBOS GERBEN;BHUWALKA KRISHNA KUMAR;PASSLACK MATTHIAS
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
代理机构 代理人
主权项
地址