发明名称 |
SEMICONDUCTOR DEVICE CHANNEL SYSTEM AND METHOD |
摘要 |
PURPOSE: A semiconductor device channel system and a method thereof are provided to increase a band gap by including a channel region with a plurality of dual layers. CONSTITUTION: A channel region is formed on a substrate (101). A trench (105) is formed in an isolation region (103). The substrate is formed under the isolation region. The substrate is made of semiconductor materials with crystal orientations. |
申请公布号 |
KR20130115112(A) |
申请公布日期 |
2013.10.21 |
申请号 |
KR20130002985 |
申请日期 |
2013.01.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
DOORNBOS GERBEN;BHUWALKA KRISHNA KUMAR;PASSLACK MATTHIAS |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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