| 摘要 |
An organic element is protected by a protection film which has high sealing performance while relaxing a stress and does not change the characteristics of the organic element. In a substrate processing system Sys, a substrate processing apparatus 10, which includes a deposition apparatus PM1, a first microwave plasma processing apparatus PM3, and a second microwave plasma processing apparatus PM4, is arranged in a cluster structure, and an organic electronic device is manufactured by keeping a space where a substrate G moves from carry-in to carry-out in a desired depressurized state. An organic EL element is formed by the deposition apparatus PM1, butyne gas is plasmatized by microwave power by the first microwave plasma processing apparatus PM3, and an aCHx film 54 is formed adjacent to the organic EL element to cover the organic EL element. Then, silane gas and nitrogen gas are plasmatized by microwave power by the second microwave plasma processing apparatus PM4, and a SiNx film 55 is formed on the aCHx film 54. |
