MOULD FOR GALVANOPLASTY AND METHOD OF FABRICATING THE SAME

摘要

The process comprises supplying a substrate comprising an upper layer (21') and a lower layer (23') made of electrically conductive silicon-based material and fixed between each other by an electrically insulating intermediate layer (22'), etching a pattern in the upper layer up to the intermediate layer to form a cavity of a mold (39'), overlaying the upper part of the substrate with an electrically insulating coating, and etching the coating and the intermediate layer to limit their presence in each vertical wall (31') formed in the upper layer. A second pattern is etched to form a recess. The process comprises supplying a substrate comprising an upper layer (21') and a lower layer (23') made of electrically conductive silicon-based material and fixed between each other by an electrically insulating intermediate layer (22'), etching a pattern in the upper layer up to the intermediate layer to form a cavity of a mold (39'), overlaying the upper part of the substrate with an electrically insulating coating, and etching the coating and the intermediate layer for limiting their presence in each vertical wall (31') formed in the upper layer. A second pattern is etched to form a recess contacting the cavity to provide a second level to the upper layer. A rod is finally formed by photolithography in the cavity to form a hole in the future component formed in the mold. Independent claims are included for: (1) a process for manufacturing a micromechanical component; and (2) a mold for manufacturing a micromechanical component.