发明名称 |
SPUTTERING TARGET AND PROCESS FOR PRODUCTION THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering target which comprises a sintered material containing NaNbOand can be used in a DC sputtering method, and to provide a process for producing the same.SOLUTION: A sputtering target comprises a sintered material doped with a Group-2 element and containing NaNbO. The sintered material has an electric resistance of 15 k&OHgr; or less. |
申请公布号 |
JP2013213230(A) |
申请公布日期 |
2013.10.17 |
申请号 |
JP20100171827 |
申请日期 |
2010.07.30 |
申请人 |
ASAHI GLASS CO LTD |
发明人 |
MITSUI AKIRA;OKATO KEN;ODAKA HIDEFUMI;KAWAMOTO YASUSHI |
分类号 |
C23C14/34;C01G33/00;C04B35/00 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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