发明名称 SPUTTERING TARGET AND PROCESS FOR PRODUCTION THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target which comprises a sintered material containing NaNbOand can be used in a DC sputtering method, and to provide a process for producing the same.SOLUTION: A sputtering target comprises a sintered material doped with a Group-2 element and containing NaNbO. The sintered material has an electric resistance of 15 k&OHgr; or less.
申请公布号 JP2013213230(A) 申请公布日期 2013.10.17
申请号 JP20100171827 申请日期 2010.07.30
申请人 ASAHI GLASS CO LTD 发明人 MITSUI AKIRA;OKATO KEN;ODAKA HIDEFUMI;KAWAMOTO YASUSHI
分类号 C23C14/34;C01G33/00;C04B35/00 主分类号 C23C14/34
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