| 摘要 |
The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a first conductive type substrate. A low voltage device is also formed in the substrate. The high voltage device includes a drift region, a gate, a source, a drain, and a mitigation region. The mitigation region has a second conductive type, and is formed in the drift region between the gate and drain. The mitigation region is formed by a process step which also forms a lightly doped drain (LDD) region in the low voltage device. |
