| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide substrate having a stable surface, a semiconductor device using the silicon carbide substrate, and these manufacturing method.SOLUTION: A silicon carbide substrate 1 includes a first main face 1A and a second main face 1B which is opposite to the first main face 1A. A region including at least one main face of the first main face 1A and the second main face 1B comprises a silicon carbide single crystal. On one main face, sulfur atoms are included ≥60×10atoms/cmand ≤2,000×10atoms/cm. Carbon atoms as an impurity are included ≥3 at% and ≤25 at%. |
