| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of including a low-voltage diode instead of a high-voltage diode to detect the inter-collector-emitter voltage of an insulated-gate bipolar transistor (IGBT).SOLUTION: A semiconductor device includes a wideband gap semiconductor substrate 12, and a MOS transistor T and a diode D are monolithically formed on the wideband gap semiconductor substrate 12. The transistor has a source terminal ST as a first terminal, a drain terminal DT as a second terminal, and a gate terminal. The diode D detects a voltage between the first terminal and the second terminal of the transistor. |
