发明名称 |
CONTACT ON A HETEROGENEOUS SEMICONDUCTOR SUBSTRATE |
摘要 |
A method for producing a microelectronic device with plural zones made of a metal and semiconductor compound, from semiconductor zones made of different semiconductor materials, and on which a thin semiconductor layer is formed prior to the deposition of a metal layer so as to lower the nucleation barrier of the semiconductor zones when reacting with the metal layer.
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申请公布号 |
US2013273722(A1) |
申请公布日期 |
2013.10.17 |
申请号 |
US201313860845 |
申请日期 |
2013.04.11 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT |
发明人 |
MORAND YVES;BAUDOT CHARLES;NEMOUCHI FABRICE |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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