发明名称 CONTACT ON A HETEROGENEOUS SEMICONDUCTOR SUBSTRATE
摘要 A method for producing a microelectronic device with plural zones made of a metal and semiconductor compound, from semiconductor zones made of different semiconductor materials, and on which a thin semiconductor layer is formed prior to the deposition of a metal layer so as to lower the nucleation barrier of the semiconductor zones when reacting with the metal layer.
申请公布号 US2013273722(A1) 申请公布日期 2013.10.17
申请号 US201313860845 申请日期 2013.04.11
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT 发明人 MORAND YVES;BAUDOT CHARLES;NEMOUCHI FABRICE
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
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