METHOD FOR MANUFACTURING FIN FIELD EFFECT TRANSISTOR

摘要

A method for manufacturing a fin field effect transistor comprises steps of: forming a plurality of first fin structures (1A) on a substrate (1), the plurality of first fin structures (1A) extending along a first direction parallel to the substrate (1); forming a plurality of second fin structures (3A) on the substrate, the plurality of second fin structures (3A) extending along a second direction parallel to the substrate (1), and the second direction intersecting the first direction; selectively removing a part of the second fin structures (3A) to form a plurality of gate lines; and selectively removing a part of the first fin structures (1A) to form a plurality of substrate (1) lines. According to the method for manufacturing a fin field effect transistor, uniform silicon fin lines and gate fin lines are manufactured by using a limit photolithography patterning technique, and corresponding specific areas thereof are cut intensively to form the gate lines and the substrate lines at the same time, thereby improving the uniformity and reducing the process difficulty and the cost.