METHOD FOR PRODUCING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a production method of a group 13 nitride crystal capable of improving warpage of a crystal plane (crystal axis).SOLUTION: A high quality group 13 nitride crystal with small warpage of the crystal plane (crystal axis) can be produced by using a crystal growth apparatus equipped with a press-lock mechanism to press the periphery 4 of the base substrate 1 on a susceptor 2, and proceeding crystal growth while pressing the periphery 4 of the base substrate 1. A screw type susceptor is exemplified as an example of preferable structure of the press-lock mechanism. The screw type susceptor has a structure matching to the disk-like base substrate, forming a screw type structure where the holding member 8 and the susceptor 2 have a male structure and female structure of a screw respectively, enabling the holding member 8 to vertically move with regard to the susceptor. By turning the holding member 8 or the susceptor 2 to narrow the space between the holding member 8 and the susceptor 2, the holding member 8 can hold the base substrate 1 on the susceptor 2 through a buffer material 9.