Coating material for forming porous metal oxide semiconductor film for photovoltaic cell and photovoltaic cell

摘要

There is provided a coating material for forming a porous metal oxide semiconductor film for photovoltaic cell, which is capable of forming a porous metal oxide semiconductor film of a uniform and large 5 thickness for photovoltaic cell with a small number of coating times. The coating material for forming a porous metal oxide semiconductor film for photovoltaic cell comprises porous titanium oxide fine particle aggregates having a mean particle diameter of 0.5 to 10 pm and a pore volume of 0.1 to 0.8 ml/g and unaggregated titanium oxide 10 fine particles having a mean particle diameter of 5 to 400 nm. The porous titanium oxide fine particle aggregate is an aggregate of at least one kind of fine particles selected from the group consisting of (1) particulate titanium oxide fine particles having a mean particle diameter of 5 to 400 nm, (2) fibrous titanium oxide fine particles 15 having a mean width (W) of 5 to 40 nm, a mean length (LF) of 25 to 1000 nm and an aspect ratio (WF) / (LF) of 5 to 200, and (3) tubular titanium oxide fine particles having a mean tube outer diameter (Dout) of 5 to 40 nm, a mean length (Lp) of 25 to 1000 nm and an aspect ratio (Lp) /(Dout) of 5 to 200. [Fig.1]i