| 摘要 |
PURPOSE: A division addressing type magnetic random access memory device reduces product costs by reducing the number of address terminals in half. CONSTITUTION: An address division type non-volatile memory device includes n-bit address input terminals and an address decoder (220). The address decoder activates a row selection signal and a column selection signal at the same time by synchronizing a first n-bit address signal and a second n-bit address signal successively inputted through the n-bit address input terminals. The address decoder includes an address buffer, a delay unit (223), a row decoder (224), and a column decoder (225). |
