发明名称 |
RESISTANCE CHANGE MEMORY DEVICE HAVING THRESHOLD SWITCHING AND MEMORY SWITCHING CHARACTERISTICS, METHOD OF FABRICATING THE SAME, AND RESISTANCE CHANGE MEMORY DEVICE INCLUDING THE SAME |
摘要 |
Disclosed are a resistance change memory device, a method of fabricating the same, and a resistance change memory array including the same. The resistance change memory device includes a first electrode and a second electrode. A hybrid switching layer is interposed between the first electrode and the second electrode. The hybrid switching layer is a metal oxide layer having both threshold switching characteristics and memory switching characteristics.
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申请公布号 |
US2013270509(A1) |
申请公布日期 |
2013.10.17 |
申请号 |
US201313864548 |
申请日期 |
2013.04.17 |
申请人 |
HWANG HYUNSANG;KIM SEONGHYUN;LIU XINJUN;GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
HWANG HYUNSANG;KIM SEONGHYUN;LIU XINJUN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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