| 发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A method of fabricating a semiconductor device including forming a charge storage layer, and forming a first tunnel insulating layer covering the charge storage layer, the forming of the first tunnel insulating layer including heat treating the charge storage layer.
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| 申请公布号 |
US2013273728(A1) |
申请公布日期 |
2013.10.17 |
| 申请号 |
US201313912441 |
申请日期 |
2013.06.07 |
| 申请人 |
KIM JINGYUN;LEE MYOUNGBUM;SHIN SEUNGMOK |
发明人 |
KIM JINGYUN;LEE MYOUNGBUM;SHIN SEUNGMOK |
| 分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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