| 摘要 |
A method is provided for fabricating a structured semiconductor substrate including: i) depositing, on the surface of a semiconductor material, a sacrificial layer of material different from the semiconductor material. At step ii), the sacrificial layer, formed in step i) is etched at least in part so as to form sacrificial layer islets on the surface of the semiconductor material. The semiconductor material of step ii) is etched at least in part, in zones that are not protected by said islets, so as to form a structured semiconductor material, this step iii) being performed in the presence of oxygen so as to deposit an oxide layer on the surface of the semiconductor material. The sacrificial layer islets and the oxide layer are eliminated from the surface of the semiconductor material obtained in step iii), so as to form the structured substrate.
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