发明名称 |
Back Contact Work Function Modification for Increasing CZTSSe Thin Film Photovoltaic Efficiency |
摘要 |
Techniques for increasing conversion efficiency of thin film photovoltaic devices through back contact work function modification are provided. In one aspect, a photovoltaic device is provided having a substrate; a back contact on the substrate, wherein at least a portion of the back contact has a work function of greater than about 4.5 electron volts; an absorber layer on a side of the back contact opposite the substrate; a buffer layer on a side of the absorber layer opposite the back contact; and a top electrode on a side of the buffer layer opposite the absorber layer. The absorber layer preferably has thickness that is less than a depletion width+an accumulation width+a carrier diffusion length.
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申请公布号 |
US2013269764(A1) |
申请公布日期 |
2013.10.17 |
申请号 |
US201213445406 |
申请日期 |
2012.04.12 |
申请人 |
BARKHOUSE DAVID AARON RANDOLPH;GOKMEN TAYFUN;GUNAWAN OKI;HAIGHT RICHARD ALAN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BARKHOUSE DAVID AARON RANDOLPH;GOKMEN TAYFUN;GUNAWAN OKI;HAIGHT RICHARD ALAN |
分类号 |
H01L31/02;H01L31/18 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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