发明名称 AMPLIFIER WITH FLOATING WELL
摘要 A low-noise amplifier includes a first transistor having a gate configured to receive an oscillating input signal and a source coupled to ground. A second transistor has a source coupled to a drain of the first transistor, a gate coupled to a bias voltage, and a drain coupled to an output node. At least one of the first and second transistors includes a floating deep n-well that is coupled to an isolation circuit.
申请公布号 US2013271223(A1) 申请公布日期 2013.10.17
申请号 US201213445955 申请日期 2012.04.13
申请人 HSIEH HSIEH-HUNG;LIU YI-HSUAN;LEE CHIAO-HAN;YEH TZU-JIN;JOU CHEWN-PU;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HSIEH HSIEH-HUNG;LIU YI-HSUAN;LEE CHIAO-HAN;YEH TZU-JIN;JOU CHEWN-PU
分类号 H03F3/04 主分类号 H03F3/04
代理机构 代理人
主权项
地址