| 摘要 |
The present invention relates to a method for use in fabrication of silicon dioxide nanowires, which does not require any form metal catalyst or conventional high resolution lithography. The method comprises the steps of providing a silicon based substrate (100); forming, silicon based nanostructures (200) on an insulating material and forming silicon dioxide nanowires by selective oxidation process (300); wherein the silicon based nanostructures (200) are formed on the sidewall of said insulating material; and wherein the selective oxidation process (300) includes the step of thermally oxidizing silicon nanostructures. |
