METHOD FOR FORMING TiSin THIN LAYER BY USING ATOMIC LAYER DEPOSITION

摘要

There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or N2 containing inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of the gas used in forming the TiSiN thin film is Ti containing gas : 9x10-3Torr or less, Si containing gas : 1x10-3 ~ 3x10-1Torr and N containing gas : 7x10-3 ~ 6x10-1Torr, and a pressure range of the gas is 500mTorr ~ 5Torr and the Si content of the formed TiSiN thin film is 20 atom % or less.