发明名称 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING HYDROGEN GAS USED IN THE PRODUCTION METHOD AS REDUCING AGENT
摘要 PROBLEM TO BE SOLVED: To provide a method for purifying hydrogen in a production method of polycrystalline silicon by thermal decomposition of trichlorosilane and hydrogen reduction, enabling to easily obtain high purity polycrystalline silicon of 99.999999999% or more purity.SOLUTION: As the generation source of hydrogen, electrolysis of metal inorganic acid salt and/or metal hydroxide of common salt, potassium hydroxide or the like in aqueous solution is adopted, and generated hydrogen is washed with water, and then removal of microparticles is performed by filtering. Because the electrolysis is performed in an aqueous solution of the metal inorganic acid salt and/or metal hydroxide, any carbon content does not mix in hydrogen, and the metal hydroxide (as microparticle) can be removed in very high efficiency by the washing with water and filtering with a filter.
申请公布号 JP2013212974(A) 申请公布日期 2013.10.17
申请号 JP20130032749 申请日期 2013.02.22
申请人 TOKUYAMA CORP 发明人 TANAKA YASUYUKI;MATSUDA MITSUHIRO
分类号 C01B33/03;C01B33/035;C25B1/04 主分类号 C01B33/03
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