Non-Volatile Memory Device and Method of Forming the Same

摘要

According to embodiments of the present invention, a non-volatile memory device is provided. The non-volatile memory device includes a nanowire transistor including a nanowire channel, and a resistive memory cell arranged adjacent to the nanowire transistor and in alignment with a longitudinal axis of the nanowire channel. According to further embodiments of the present invention, a method of forming a non-volatile memory device is also provided.