METHOD FOR PREPARING A COARSE-GRAIN CRYSTALLISED SILICON LAYER

摘要

The present invention relates to a method for forming a crystallised silicon layer made up of grains having an average size of no less than 20 µm, including at least the steps that comprise: (1) providing a layer of silicon to be (re)crystallised, the average grain size of which is less than 10 µm; (2) placing said layer of silicon to be (re)crystallised in contact with a liquid composition at least partially made up of a metal solvent; and (3) exposing the assembly to a thermal treatment suitable for (re)crystallising said layer of silicon with the expected grain size, characterised in that said thermal treatment includes heating the assembly made up of the layer of silicon in contact with said liquid composition to a temperature that is lower than 1410 °C and at least equal to the eutectic temperature in the solvent-silicon phase diagram.