| 摘要 |
PROBLEM TO BE SOLVED: To improve the uniformity of plasma processing for a processing target, while preventing excess plasma processing.SOLUTION: A plasma processing apparatus comprises: a vacuum chamber 1 in which a reactive gas from a gas supply source is supplied into a processing chamber 3 whose pressure can be reduced to a vacuum state; a power supply side connector 6 connected to a power supply side of AC power source and a ground side connector 7 connected to a ground side of the AC power source provided in the vacuum chamber 1; an antenna body A provided in the processing chamber 3 and having a power supply side electrode bar 8 in which a base edge is connected to the power supply side connector 6 and a ground side electrode bar 9 in which a base edge is connected to the ground side connector 7 and which is arranged to face the power supply side electrode bar 8. The apparatus further comprises a first antenna body A1 supported on a left side surface part 2b of the vacuum chamber 1 and a second antenna body A2 supported on a right side surface part 2c. |
