| 摘要 |
PROBLEM TO BE SOLVED: To solve such problems that when producing a light-emitting element in the long wavelength region using a group III nitride semiconductor crystal such as gallium nitride, inconsistency with a lattice constant is generated so that desired light-emitting wavelength cannot be obtained; and the group III nitride semiconductor crystal causes large warpage of a crystal plane due to internal stress resulting in deterioration factor of quality and yield.SOLUTION: A group III nitride semiconductor crystal, in which the principal crystal plane has a convexly curved area in the growing direction and a convexly curved area in a reverse direction to the growing direction, is suitable to the substrate of a light-emitting element in the long wavelength region, and can be a high quality group III nitride semiconductor crystal improved in warpage of the crystal plane. |
