发明名称 |
FEED MATERIAL FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE |
摘要 |
Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed material 11 for epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.
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申请公布号 |
US2013269596(A1) |
申请公布日期 |
2013.10.17 |
申请号 |
US201113995722 |
申请日期 |
2011.06.29 |
申请人 |
TORIMI SATOSHI;NOGAMI SATORU;MATSUMOTO TSUYOSHI;TOYO TANSO CO., LTD. |
发明人 |
TORIMI SATOSHI;NOGAMI SATORU;MATSUMOTO TSUYOSHI |
分类号 |
C30B19/12;C30B29/36 |
主分类号 |
C30B19/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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