发明名称 |
METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH CHANNEL CONDUCTIVITY AND HIGH BREAKDOWN VOLTAGE NITROGEN POLAR HIGH ELECTRON MOBILITY TRANSISTORS |
摘要 |
<p>A method for growing high mobility, high charge Nitrogen polar (N-polar) or Nitrogen face (In, Al, Ga)N/GaN High Electron Mobility Transistors (HEMTs). The method can provide a successful approach to increase the breakdown voltage and reduce the gate leakage of the N-polar HEMTs, which has great potential to improve the N-polar or N-face HEMTs' high frequency and high power performance.</p> |
申请公布号 |
WO2013155396(A1) |
申请公布日期 |
2013.10.17 |
申请号 |
WO2013US36342 |
申请日期 |
2013.04.12 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;LU, JING;KELLER, STACIA;MISHRA, UMESH K. |
发明人 |
LU, JING;KELLER, STACIA;MISHRA, UMESH K. |
分类号 |
H01L29/66;H01L21/338;H01L21/8222 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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