| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming a resist underlayer film, the composition having excellent storage stability and capable of reducing generation of coating defects, and to provide a pattern forming method using the composition for forming a resist underlayer film.SOLUTION: The composition for forming a resist underlayer film comprises [A] a polysiloxane and [B] an organic solvent. The [B] organic solvent includes (B1) alkylene glycol monoalkylether acetates having a standard boiling point of lower than 150.0°C and (B2) an organic solvent having a standard boiling point of 150.0°C or higher. The content percentage of the (B1) alkylene glycol monoalkylether acetates in the [B] organic solvent is 50 mass% or more and 99 mass% or less, while the content percentage of the (B2) organic solvent is 1 mass% or more and 50 mass% or less. The standard boiling point of the (B2) organic solvent is preferably 180°C or higher. |
