发明名称 HARMONIC RESIST MODEL FOR USE IN LITHOGRAPHIC APPARATUS, AND DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method of determining an image of a mask pattern in a resist coated on a substrate.SOLUTION: A method comprises the steps of: determining an aerial image of a mask pattern at a substrate level; convolving the aerial image with at least two orthogonal convolution kernels; and determining a resist image representing the mask pattern in a resist.
申请公布号 JP2013214104(A) 申请公布日期 2013.10.17
申请号 JP20130146920 申请日期 2013.07.12
申请人 ASML NETHERLANDS BV 发明人 CAO YU;LUOQI CHEN;BRUGUIER ANTOINE JEAN;SHAO WENJIN
分类号 G03F1/70;G03F1/36;G06F17/50;H01L21/027 主分类号 G03F1/70
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