发明名称 |
HARMONIC RESIST MODEL FOR USE IN LITHOGRAPHIC APPARATUS, AND DEVICE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of determining an image of a mask pattern in a resist coated on a substrate.SOLUTION: A method comprises the steps of: determining an aerial image of a mask pattern at a substrate level; convolving the aerial image with at least two orthogonal convolution kernels; and determining a resist image representing the mask pattern in a resist. |
申请公布号 |
JP2013214104(A) |
申请公布日期 |
2013.10.17 |
申请号 |
JP20130146920 |
申请日期 |
2013.07.12 |
申请人 |
ASML NETHERLANDS BV |
发明人 |
CAO YU;LUOQI CHEN;BRUGUIER ANTOINE JEAN;SHAO WENJIN |
分类号 |
G03F1/70;G03F1/36;G06F17/50;H01L21/027 |
主分类号 |
G03F1/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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