POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

In the present invention, a first region (19) is sandwiched in the thickness direction by a drain electrode (31) and a source electrode (32), and has a first conductivity type. The first region (19) contains a drift layer (11) and a channel layer (12). The drift layer (11) faces the drain electrode (31). The channel layer (12) is laminated to the drift layer (11), and faces the source electrode (32). The drift layer (11) has a higher impurity concentration than that of the channel layer (12). A second region (20) has a second conductivity type differing from the first conductivity type. The second region (20) has a charge compensation section (21) and a gate section (22). The charge compensation section (21) sandwiches the drift layer (11) in an in-plane direction intersecting the thickness direction. The gate section (22) sandwiches the channel layer (12) in the in-plane direction.