METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor having favorable electric characteristics and high reliability, and to provide a display device using the thin film transistor as a switching element.SOLUTION: An In-Ga-Zn-O-based film is formed so as to have an incubation state exhibiting an electron beam diffraction pattern different from a conventionally known amorphous state that a halo shape pattern appears, and different from a conventionally known crystal state that a spot appears clearly, and the In-Ga-Zn-O-based film is used as a channel formation region of a channel etched thin film transistor.