STRAINED SOI FINFET ON EPITAXIALLY GROWN BOX

摘要

A semiconductor structure includes an epitaxial insulator layer located on a substrate. A fin structure is located on the epitaxial insulator layer, where at least one epitaxial source-drain region having an embedded stressor is located on the epitaxial insulator layer and abuts at least one sidewall associated with the fin structure. The epitaxial source-drain region having the embedded stressor provides stress along the fin structure such that the provided stress is based on a lattice mismatch between the epitaxial source-drain region, and both the epitaxial insulator layer and the one side-wall associated with the fin structure.