发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has stable electrical characteristics and high reliability.SOLUTION: The semiconductor device includes: a gate electrode disposed over an insulating surface; a gate insulating film disposed over the gate electrode; a semiconductor film which is disposed over the gate insulating film and overlaps with the gate electrode; and a protective insulating film disposed over the semiconductor film. The protective insulating film includes a crystalline insulating film, and an aluminum oxide film disposed over the crystalline insulating film. |
申请公布号 |
JP2013214732(A) |
申请公布日期 |
2013.10.17 |
申请号 |
JP20130042905 |
申请日期 |
2013.03.05 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
TANAKA TETSUHIRO;TAKAHASHI ERIKA |
分类号 |
H01L21/336;G02F1/1368;H01L21/28;H01L21/8242;H01L21/8247;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/417;H01L29/786;H01L29/788;H01L29/792;H01L51/50;H05B33/14 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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