发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which has stable electrical characteristics and high reliability.SOLUTION: The semiconductor device includes: a gate electrode disposed over an insulating surface; a gate insulating film disposed over the gate electrode; a semiconductor film which is disposed over the gate insulating film and overlaps with the gate electrode; and a protective insulating film disposed over the semiconductor film. The protective insulating film includes a crystalline insulating film, and an aluminum oxide film disposed over the crystalline insulating film.
申请公布号 JP2013214732(A) 申请公布日期 2013.10.17
申请号 JP20130042905 申请日期 2013.03.05
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA TETSUHIRO;TAKAHASHI ERIKA
分类号 H01L21/336;G02F1/1368;H01L21/28;H01L21/8242;H01L21/8247;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/417;H01L29/786;H01L29/788;H01L29/792;H01L51/50;H05B33/14 主分类号 H01L21/336
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