| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device manufacturing method and a semiconductor storage device, which achieve a high degree of freedom in hole shape control.SOLUTION: A semiconductor storage device manufacturing method according to an embodiment comprises the steps of: forming on a substrate, a laminate including a plurality of first silicon films which contain impurities and have a concentration difference in impurity between different layers, and a plurality of non-doped second silicon films each of which is provided between the first silicon films; removing the second silicon films by etching through holes formed in the laminate to form inter-electrode space between the first silicon films; forming a memory film including a charge storage film on a sidewall of the hole and forming at least a part of the memory film in the inter-electrode space; and forming a channel body inside the memory film in the hole. |
