SEMICONDUCTOR DEVICE STRUCTURE HAVING VERTICAL DIELECTRIC LAYER

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can avoid charging of a drift control zone 21.SOLUTION: A semiconductor device of a present embodiment comprises: a semiconductor body 100 including a first surface 101, a second surface 102' an edge 103 and an edge region 104 adjacent to the edge 103; a drift zone 11 and a drift control zone 21 which are dielectrically isolated from each other by a first dielectric layer 31 extending in a perpendicular direction to the semiconductor body 100; a first connection zone 200 arranged in a region of the second surface 102' of the semiconductor body 100, which contacts the drift zone 11 and the edge region 104; a third dielectric layer 43 arranged between the drift zone 11 and the first connection zone 200; and a rectifier cell 72 connected between a connection zone 24 and a connection zone 71 of the edge region 104. The drift control zone 21 is dielectrically isolated from the edge region 104 at least by a second dielectric layer 32.