METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress a defect in silicide formation.SOLUTION: The method for manufacturing the semiconductor device includes the steps of: forming a silicide block film 60 on a semiconductor layer 10 from the top of a gate electrode 50 and side wall films 20 and 30; forming a resist pattern 90 covering a non-silicide region on the silicide block film 60; and etching the silicide block film 60 which is not covered with the resist pattern 90 by a combination of isotropic etching and anisotropic etching.