| 摘要 |
PROBLEM TO BE SOLVED: To provide a high throughput plasma processing method which improves efficiency of plasma processing while ensuring long-term stability of the plasma processing.SOLUTION: A plasma processing method comprises: measuring at a plasma processing apparatus by a current/voltage probe 113, a current flowing into or a voltage applied to plasma from a high-frequency power source 111 via a substrate electrode 106; calculating from impedance obtained by the current/voltage probe 113, before introducing a wafer 109 which is a treatment material to a processing chamber 101, a thickness of a coating film formed in the processing chamber 101 after cleaning by plasma; and setting time for formation processing of the coating film at time capable of obtaining an intended thickness of the coating film which is calculated on the basis of obtained thickness of the coating film thereby to automatically optimize the thickness of the coating film according to processing conditions. |
