| 摘要 |
The present invention provides a method to determine the thickness of a thin film during deposition. A target film thickness is set. A substrate is placed within a deposition system. The thin film is deposited onto the substrate within the deposition system. Radiation reflected from the substrate is monitored at multiple wavelengths during the deposition of the thin film using standard OEI techniques. A value derived from the reflected radiation is monitored. A time is detected at which the derived value is at a target value. A film thickness is calculated at the detected times to generate data. A mathematical analysis is performed on the generated data to determine an equation for deposited film thickness versus time. The calculated equation for deposited film thickness versus time is used to achieve the target film thickness.
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