| 摘要 |
An active device and a fabricating method thereof are provided. The active device includes a buffer layer, a channel, a gate, a gate insulation layer, a source and a drain. The buffer layer is disposed on a substrate and has a positioning region. A thickness of a portion of the buffer layer in the positioning region is greater than a thickness of a portion of the buffer layer outside the positioning region. The channel is disposed on the buffer layer and in the positioning region. The gate is disposed above the channel. The gate insulation layer is disposed between the channel and the gate. The source and the drain are disposed above the channel and electrically connected to the channel.
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