THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

摘要

A three-dimensional (3D) semiconductor memory device includes a stack structure, a channel structure, and a vertical insulator. The stack structure includes gate patterns and insulating patterns which are alternately and repeatedly stacked on a substrate. A channel structure penetrates the stack structure and is connected to the substrate. A vertical insulator includes a high-k dielectric layer. The vertical insulator is covered by the channel structure and the high-k dielectric pattern of the vertical insulator is in contact with the gate patterns.