发明名称 |
Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template |
摘要 |
A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.
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申请公布号 |
US2013273721(A1) |
申请公布日期 |
2013.10.17 |
申请号 |
US201213633723 |
申请日期 |
2012.10.02 |
申请人 |
WANG DAVID XUAN-QI;MOSLEHI MEHRDAD |
发明人 |
WANG DAVID XUAN-QI;MOSLEHI MEHRDAD |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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