HIGH DENSITY MICROWAVE PLASMA GENERATION APPARATUS, AND MAGNETRON SPUTTERING DEPOSITION SYSTEM USING THE SAME

摘要

A microwave plasma generation apparatus (4) includes: a rectangular waveguide (41) that transmits a microwave; a slot antenna (42) that has a slot (420) through Which the microwave passes; and a dielectric portion (43) that is arranged so as to cover the slot (420) and of which a plasma generating region-side front face is parallel to an incident direction in which the microwave enters from the slot (420). The microwave plasma generation :apparatus (4) is able to generate microwave plasma (P1) under a low pressure of lower than or equal to 1 Pa. A magnetron sputtering deposition system (1) includes the microwave plasma generation apparatus (4), and carries out film deposition using magnetron plasma. (P2) while radiating microwave plasma (P1) between a base material (20) and a target (30). With the magnetron sputtering deposition system (1), it is possible to form a thin film having small asperities on its surface.