| 发明名称 |
Indium Sputtering Target And Method For Manufacturing Same |
| 摘要 |
An indium sputtering target with a short time to attain a stable film deposition rate once sputtering has begun is provided. An indium sputtering target having a surface to be sputtered with an arithmetic average roughness Ra of from 5 mum to 70 mum prior to sputtering.
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| 申请公布号 |
US2013270108(A1) |
申请公布日期 |
2013.10.17 |
| 申请号 |
US201213819499 |
申请日期 |
2012.08.15 |
| 申请人 |
ENDO YOUSUKE;SAKAMOTO MASARU;JX NIPPON MINING & METALS CORPORATION |
发明人 |
ENDO YOUSUKE;SAKAMOTO MASARU |
| 分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
| 代理机构 |
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代理人 |
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| 主权项 |
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