发明名称 |
GRAPHENE LAYER FORMATION ON A CARBON BASED SUBSTRATE |
摘要 |
A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source. |
申请公布号 |
US2013273720(A1) |
申请公布日期 |
2013.10.17 |
申请号 |
US201213448068 |
申请日期 |
2012.04.16 |
申请人 |
SUMANT ANIRUDHA V.;BALANDIN ALEXANDER A.;UCHICAGO ARGONNE, LLC |
发明人 |
SUMANT ANIRUDHA V.;BALANDIN ALEXANDER A. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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