| 摘要 |
<p>In the inspection of semiconductor circuit patterns, in order to identify the cause of process failure, there are cases when it is necessary to identify, not only the distribution of the number of defects on a wafer, but also, more precisely, in which parts of the semiconductor pattern the defects occurred more frequently. Accordingly, the purpose of the present invention is to provide a device which is capable of easily identifying the cause of process failure from the positional relationship between the pattern and the defect-occurrence frequency distribution. The present invention is characterized by being provided with: a charged particle beam optical system which irradiates a sample with a charged particle beam, and detects secondary charged particles; an image processing unit which obtains, from a plurality of images to be inspected obtained from the secondary charged particles, the defect-candidate-occurrence frequency for each prescribed area in the images to be inspected; and a display unit for displaying the defect-candidate-occurrence frequency distribution such that the positional relationship between the defect-candidate-occurrence frequency distribution and the pattern can be understood.</p> |
