METHOD FOR PRODUCING DOPED SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal by FZ method capable of obtaining comparatively inexpensively crystals having various dopant concentrations in which each dopant concentration is comparatively uniform, and capable of heightening resistance.SOLUTION: In this method for producing doped silicon single crystal, a raw material rod of silicon having a desired dopant concentration supported by either of upper and lower two crystal driving shafts, and a seed crystal rod supported by the other crystal driving shaft are used; a raw material rod end and a seed crystal rod end which face to each other are heated and bonded by FZ method of a laser heating system, to thereby form a molten zone; and both driving shafts to which both rods are attached are moved in the same direction from the raw material rod toward the direction of the seed crystal and rotated relatively to thereby manufacture a silicon single crystal rod. The raw material rod of silicon having a desired dopant concentration is prepared by pressing or pressing/sintering a mixture of pure silicon powder and dopant powder and/or silicon powder doped beforehand.